IGBT BSM25GD120DN2

Ease of Installation

Install your HANI™ Clamp Sensor in seconds

Product Attribute Attribute Value Select Attribute

Manufacturer: Infineon

Product Category: IGBT Modules

Product: IGBT Silicon Modules

Configuration: Full Bridge

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 35 A

Gate-Emitter Leakage Current: 180 nA

Pd - Power Dissipation: 200 W

Package / Case: EconoPACK 2A

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Packaging: Tray

Brand: Infineon Technologies

Height: 17 mm

Length: 107.5 mm

Maximum Gate Emitter Voltage: 20 V

Mounting Style: Screw Mount

Product Type: IGBT Modules

Subcategory: IGBTs

Technology: Si

Width: 45 mm

Part # Aliases: SP000100370 BSM25GD120DN2BOSA1

Unit Weight: 180 g